1 AM4915P analog power september, 2002 - rev. a preliminary publication order number: ds-am4915_e these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. dual p-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability ? extended v gs range (25) for battery pack applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ? )i d (a) 17.5 @ v gs = -10v -9.5 23 @ v gs = -4.5v -8.5 product summary -30 symbol maximum units v ds -30 v gs 25 t a =25 o c-9.5 t a =70 o c-8.2 i dm 50 i s -2.1 a t a =25 o c2.0 t a =70 o c1.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units maximum junction-to-case a t <= 5 sec r jc 40 o c/ w maximum junction-to-ambient a t <= 5 sec r ja 78 o c/w thermal resistance ratings parame te r 1 2 3 4 7 8 5 6
2 AM4915P analog power september, 2002 - rev. a preliminary publication order number: ds-am4915_e notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license und er its patent rights nor the ri ghts of others. apl products a re not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 ua -30 ga t e -t h re s h o ld vo lt a g e v gs(th) v ds = v gs , i d = -250 ua -1 -1.6 -3 gate-body leakage i gss v ds = 0 v, v gs = 25 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -50 a v gs = -10 v, i d = -11.5 a 15.5 17.5 v gs = -4.5 v, i d = -9.3 a 20.5 23 v gs = -10 v, i d = -13 a, tj = 55 o c 16.5 22 forward tranconductance a g fs v ds = -15 v, i d = -11.5 a 29 s diode forward voltage v sd i s = 2.5 a, v gs = 0 v -0.8 -1.2 v total gate charge q g 64 100 gate-source charge q gs 11 gate-drain charge q gd 17 turn-on delay time t d(on) 15 25 ris e time t r 13 20 turn-off delay time t d(off) 100 152 fall-time t f 54 81 dynamic b switching specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v te s t conditions symbol v dd = -15 v, r l = 6 ? , i d = -1 a, vgen = -10 v ns v ds = -15 v, v gs = -10 v, i d = -11.5 a nc drain-source on-resistance a r ds(on) m ? parameter limits unit
3 AM4915P analog power september, 2002 - rev. a preliminary publication order number: ds-am4915_e typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. r ds (on) with drain current (a) figure 3. r ds (on) variation with temperature figure 4. rds(on) with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics -50 -40 -30 -20 -1 0 0 -3 -2.5 -2 -1 .5 -1 -0.5 0 vds - drain to source voltage (v) 2.5 v 3v 3.5 v 4v thru 10v 2 v 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - juncation t emperature (oc) normalized r (on) vgs = 10v id = 11.5a 0 0.01 0.02 0.03 0.04 -15 -12 -9 -6 -3 0 i d - drain current (a) r ds(on) ( ? ) v gs = 10 v 0 0.01 0.02 0.03 0.04 0.05 0.06 246810 v gs - gate to source voltage (v) r ds(on) ( ? ) i d = 11.5 a -50 -40 -30 -20 -10 0 -6 -5 -4 -3 -2 -1 0 v gs - gate to source voltage (v) i d - grain current (a) 25c 125c -55c 0.1 1 10 100 0 0 .3 0 .6 0 .9 1 .2 1 .5 v sd - source to drain voltage (v) i s - source current (a) tj = 150c tj = 25c
4 AM4915P analog power september, 2002 - rev. a preliminary publication order number: ds-am4915_e typical electrical characteristics (p-channel) normalized thermal transien t junction to ambient figure 11. transient thermal response curve figure 8. capacitance characteristics 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 single pules wave time (s) normlized z p dm t1 t2 1. duty cycal d = t1/t2 2. p e r unit b a s e r ja =70 c /w 3. t jm - t a = p dm z jc 4. s ure fa c e m o unte d si n gl e p ulse 0.02 0.05 0.1 0.2 0.5 0 500 1000 1500 2000 2500 3000 -20 -16 -12 -8 -4 0 vds - drain to source voltage (v) capacitance (pf) cis s coss crss -0.4 -0.2 0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150 t j - junction temperature (oc) v gs(th) t hreshold voltage (v) i d = 250a figure 9. junction temperature with threshold voltage 0 5 10 15 20 25 30 35 40 45 50 0.001 0.1 10 1000 sin gle p ule s t im e ( s) power (w) figure 10. single pulse maximum power dissipation figure 7. gate charge characteristics 0 2 4 6 8 10 0 1020304050 q gs , total gate charge (nc) v gs gate to source voltage (v) v ds = 10v
5 AM4915P analog power september, 2002 - rev. a preliminary publication order number: ds-am4915_e package information so-8: 8lead h x 45
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